CORC

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CORC

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The transport mechanism of gate leakage current in algan/gan high electron mobility transistors 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 5
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Jiang, L. J.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：125/5  |  提交时间：2010/04/22
Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions 期刊论文
Applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: 3
作者:  Wu, Yunlong;  Zhang, Liuwan;  Xie, Guanlin;  Zhu, Jia-Lin;  Chen, Yonghai
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Influence of electron irradiation on hydrothermally grown zinc oxide single crystals 期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028
Lu LW; So CK; Zhu CY; Gu QL; Li CJ; Fung S; Brauer G; Anwand W; Skorupa W; Ling CC
收藏  |  浏览/下载：110/1  |  提交时间：2010/03/08
Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 7, 页码: 4570-4574
Zhou, M; Zhao, DG
收藏  |  浏览/下载：56/1  |  提交时间：2010/03/08
Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115
Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH
收藏  |  浏览/下载：63/3  |  提交时间：2010/03/08
Effect of heavy boron doping on the electrical characteristics of sigehbts 期刊论文
Semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895
作者:  Yao, Fei;  Xue, Chun-Lai;  Cheng, Bu-Wen;  Wang, Qi-Ming
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Effect of heavy boron doping on the electrical characteristics of SiGeHBTs 期刊论文
semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895
Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/29
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29

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