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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 143101
Fu, MQ; Pan, D; Yang, YJ; Shi, TW; Zhang, ZY; Zhao, JH; Xu, HQ; Chen, Q
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/20
Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 8
作者:  Wang Li-Guo;  Shen Chao;  Zheng Hou-Zhi;  Zhu Hui;  Zhao Jian-Hua
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3
作者:  Qiao, Y. B.;  Feng, S. W.;  Xiong, C.;  Wang, X. W.;  Ma, X. Y.
收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12
Determining the sign of g factor via time-resolved kerr rotation spectroscopy with a rotatable magnetic field 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 8, 页码: 4
作者:  Gu Xiao-Fang;  Qian Xuan;  Ji Yang;  Chen Lin;  Zhao Jian-Hua
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:  Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao
收藏  |  浏览/下载：120/0  |  提交时间：2019/05/12
Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:  Jin, Lan;  Zhou, Huiying;  Qu, Shengchun;  Wang, Zhanguo
收藏  |  浏览/下载：99/0  |  提交时间：2019/05/12
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a mn-doped gaas base 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 5
作者:  Shen, C.;  Wang, L. G.;  Zheng, H. Z.;  Zhu, H.;  Chen, L.
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703
作者:  Yang XH;  He JF
收藏  |  浏览/下载：57/7  |  提交时间：2011/07/05

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