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Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer 期刊论文
aip advances, 2016, 卷号: 6, 期号: 3, 页码: 035312
Yao Guo; Zhiqiang Liu; Yang Huang; Xiaoyan Yi; Junxi Wang; Guohong Wang; Jinmin Li
收藏  |  浏览/下载：12/0  |  提交时间：2017/03/16
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Microwave generation in an electro-absorption modulator integrated with a dfb laser subject to optical injection 期刊论文
Optics express, 2009, 卷号: 17, 期号: 24, 页码: 22114-22123
作者:  Zhu, Ning Hua;  Zhang, Hong Guang;  Man, Jiang Wei;  Zhu, Hong Liang;  Ke, Jian Hong
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection 期刊论文
optics express, 2009, 卷号: 17, 期号: 24, 页码: 22114-22123
Zhu NH (Zhu Ning Hua); Zhang HG (Zhang Hong Guang); Man JW (Man Jiang Wei); Zhu HL (Zhu Hong Liang); Ke JH (Ke Jian Hong); Liu Y (Liu Yu); Wang X (Wang Xin); Yuan HQ (Yuan Hai Qing); Xie L (Xie Liang); Wang W (Wang Wei)
收藏  |  浏览/下载：265/34  |  提交时间：2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08
A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1686-1691
作者:  Wu Meng
收藏  |  浏览/下载：24/0  |  提交时间：2010/11/23
Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer 期刊论文
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
作者:  Liu, W.;  Wang, J. F.;  Zhu, J. J.;  Jiang, D. S.;  Yang, H.
收藏  |  浏览/下载：8/0  |  提交时间：2019/05/12
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
STRESS  
Intersubband optical absorption in quantum dots-in-a-well heterostructures 期刊论文
Journal of applied physics, 2005, 卷号: 98, 期号: 5, 页码: 5
作者:  Han, XX;  Li, JM;  Wu, JJ;  Cong, GW;  Liu, XL
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Realization of highly uniform self-assembled inas quantum wires by the strain compensating technique 期刊论文
Applied physics letters, 2005, 卷号: 87, 期号: 8, 页码: 3
作者:  Huang, XQ;  Wang, YL;  Li, L;  Liang, L;  Liu, FQ
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12

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