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科研机构
半导体研究所 [12]
内容类型
期刊论文 [8]
会议论文 [4]
发表日期
2009 [2]
2008 [2]
2007 [1]
2006 [1]
2005 [2]
1999 [4]
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半导体物理 [6]
半导体材料 [2]
光电子学 [1]
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Weak measurement of qubit oscillations with strong response detectors: violation of the fundamental bound imposed on linear detectors
期刊论文
Physical review b, 2009, 卷号: 79, 期号: 7, 页码: 5
作者:
Jiao, HuJun
;
Li, Feng
;
Wang, Shi-Kuan
;
Li, Xin-Qi
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Mesoscopic systems
Photodetectors
Quantum computing
Single electron transistors
Weak measurement of qubit oscillations with strong response detectors: Violation of the fundamental bound imposed on linear detectors
期刊论文
physical review b, 2009, 卷号: 79, 期号: 7, 页码: art. no. 075320
Jiao HJ
;
Li F
;
Wang SK
;
Li XQ
收藏
  |  
浏览/下载:372/122
  |  
提交时间:2010/03/08
mesoscopic systems
photodetectors
quantum computing
single electron transistors
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Solid-state qubit measurement with single electron transistors
会议论文
2nd international workshop on solid-state quantum computing/mini-school on quantum information science, taipei, taiwan, jun 23-27, 2008
Jiao, HJ
;
Li, F
;
Wang, SK
;
Li, XQ
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  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
solid-state qubit
single-electron-transistor
quantum measurement
number-resolved master equation
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:
Zhang XW
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  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
ENERGY-GAP
100 GAAS
INASSB
INAS1-XSBX
ALLOYS
INSB
TRANSPORT
LAYERS
Frequency dependence of junction capacitance of gan p-i-n uv detectors
期刊论文
Solid-state electronics, 2005, 卷号: 49, 期号: 7, 页码: 1135-1139
作者:
Kang, Y
;
Xu, YH
;
Zhao, DG
;
Fang, JX
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Capacitance-frequency characteristics
Deep level
Gan
Uv detector
Frequency dependence of junction capacitance of GaN p-i-n UV detectors
期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 7, 页码: 1135-1139
作者:
Zhao DG
收藏
  |  
浏览/下载:55/35
  |  
提交时间:2010/03/17
capacitance-frequency characteristics
Structural and photoelectric studies on double barrier quantum well infrared detectors
期刊论文
Solid-state electronics, 1999, 卷号: 43, 期号: 4, 页码: 723-727
作者:
Wu, WG
;
Jiang, DS
;
Cui, LQ
;
Song, CY
;
Zhuang, Y
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
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