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| Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 535, 页码: 125377
作者: Haiyun Dong; Yang Zhang; Lijie Cui; Min Guan; Yiyang Li; Zhanping Zhu; Baoqiang Wang; Yiping Zeng
  收藏 | 浏览/下载：9/0 | 提交时间：2021/11/01 |
| Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125362
作者: G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng
收藏 | 浏览/下载：9/0 | 提交时间：2021/11/26 |
| The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
作者: G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng
收藏 | 浏览/下载：4/0 | 提交时间：2020/07/31 |
| AlGaN Nanowires Grown on SiO 2 /Si (100) Using Graphene as a Buffer Layer 期刊论文
Crystal Growth and Design, 2019, 卷号: 19, 期号: 10, 页码: 5516-5522
作者: Yunyu Wang; Dasa Dheeraj; Zhiqiang Liu; Meng Liang; Yang Li; Xiaoyan Yi; Junxi Wang; Jinmin Li; Helge Weman
收藏 | 浏览/下载：7/0 | 提交时间：2020/08/05 |
| Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文
Journal of Crystal Growth, 2017, 卷号: 460, 页码: 1-4
作者: Xiaoye Wang; Wenyuan Yang; Baojun Wang; Xianghai Ji; Shengyong Xu
收藏 | 浏览/下载：23/0 | 提交时间：2018/05/30 |
| Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate 期刊论文
crystal growth & design, 2015, 卷号: 15, 页码: 2413−2418
Wenna Du; Xiaoguang Yang; Huayong Pan; Xiaoye Wang; Haiming Ji; Shuai Luo; Xianghai Ji; Zhanguo Wang; Tao Yang
收藏 | 浏览/下载：26/0 | 提交时间：2016/03/22 |
| Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates 期刊论文
journal of crystal growth, 2015, 卷号: 426, 页码: 287–292
XiaoyeWang; WennaDu; XiaoguangYang; XingwangZhang; TaoYang
收藏 | 浏览/下载：14/0 | 提交时间：2016/03/22 |
| Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth 期刊论文
thin solid films, 2015, 卷号: 597, 页码: 39–43
Zhi Liu; Juanjuan Wen; Tianwei Zhou; Chunlai Xue; Yuhua Zuo; Chuanbo Li; Buwen Cheng; Qiming Wang
收藏 | 浏览/下载：11/0 | 提交时间：2016/03/22 |
| Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
journal of crystal growth, 2014, 卷号: 395, 页码: 55-60
Wang, XY; Yang, XG; Du, WN; Ji, HM; Luo, S; Yang, T
收藏 | 浏览/下载：14/0 | 提交时间：2015/03/25 |
| Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 7
作者: Hu Wei-Xuan; Cheng Bu-Wen; Xue Chun-Lai; Su Shao-Jian; Wang Qi-Ming
收藏 | 浏览/下载：16/0 | 提交时间：2019/05/12
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