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CORC

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Effect of PbI2 passivation to grain boundary of perovskite film with cation and anion co-mixing on performance of photovoltaic devices 期刊论文
MATERIALS LETTERS, 2020, 卷号: 273, 页码: 127979
作者:  Guangdong Li ;   Xiaoping Zou ;   Jin Cheng ;   Xiao Bai ;   Dan Chen;   Yujun Yao ;   Chuangchuang Chang ;   Xing Yu ;   Zixiao Zhou ;   Junqi Wang ;   Baoyu Liu
收藏  |  浏览/下载：26/0  |  提交时间：2021/06/22
K+ doping effect on grain boundary passivation and photoelectronics properties of NiOx/perovskite films 期刊论文
CHEMICAL PHYSICS LETTERS, 2020, 卷号: 757, 页码: 137882
作者:  Zixiao Zhou ;   Xiaoping Zou ;   Jialin Zhu ;   Jin Cheng ;   Haiyan Ren ;   Chuangchuang Chang ;  Yujun Yao ;   Dan Chen;   Xing Yu ;   Guangdong Li ;   Junqi Wang ;   Baoyu Liu
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
ieee transactions on electron devices, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Liu, Yan; Yan, Jing; Wang, Hongjuan; Zhang,Qingfang; Liu, Mingshan; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
收藏  |  浏览/下载：25/0  |  提交时间：2015/03/20
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
收藏  |  浏览/下载：30/0  |  提交时间：2014/04/04
Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures 期刊论文
physical review b, 2012, 卷号: 85, 期号: 19, 页码: 195328
Deng, HX; Li, SS; Li, JB; Wei, SH
收藏  |  浏览/下载：21/0  |  提交时间：2013/03/17
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5
作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Squeeze effect and coherent coupling behaviour in photonic crystal vertical-cavity surface-emitting lasers 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 11, 页码: article no.115104
作者:  Jiang B
收藏  |  浏览/下载：60/6  |  提交时间：2011/07/06
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06

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