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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 4, 页码: 043702
Jin, DD; Wang, LS; Yang, SY; Zhang, LW; Li, HJ; Zhang, H; Wang, JX; Xiang, RF; Wei, HY; Jiao, CM; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:15/0  |  提交时间:2015/03/20
Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction 期刊论文
physics letters a, 2012, 卷号: 376, 期号: 2012-10-11, 页码: 1067-1071
Liu, B; Lu, YW; Huang, Y; Liu, GP; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:16/0  |  提交时间:2013/03/17
Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文
Science china-technological sciences, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574
作者:  Zhang Han;  Chen NuoFu;  Wang Yu;  Zhang XingWang;  Yin ZhiGang
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载:37/0  |  提交时间:2010/12/12
Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574
Zhang H (Zhang Han); Chen NF (Chen NuoFu); Wang Y (Wang Yu); Zhang XW (Zhang XingWang); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Wang YS (Wang YanSuo); Huang TM (Huang TianMao); Bai YM (Bai YiMing); Fu Z (Fu Zhen)
收藏  |  浏览/下载:252/25  |  提交时间:2010/09/07
Distribution of dislocations in gasb and insb epilayers grown on gaas (001) vicinal substrates 期刊论文
Journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: 4
作者:  Li, Meicheng;  Qiu, Yongxin;  Liu, Guojun;  Wang, Yutian;  Zhang, Baoshun
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/08
Investigation of gasb epilayer grown on vicinal gaas(001) substrate by high resolution x-ray diffraction 期刊论文
Physica scripta, 2007, 卷号: T129, 页码: 27-30
作者:  Qiu, Yongxin;  Li, Meicheng;  Wang, Yutian;  Zhang, Baoshun;  Wang, Yong
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction 期刊论文
physica scripta, 2007, 卷号: t129, 页码: 27-30
Qiu, YX; Li, MC; Wang, YT; Zhang, BS; Wang, Y; Liu, GJ; Zhao, LC
收藏  |  浏览/下载:51/0  |  提交时间:2010/03/08
FILMS  
Influence of dislocation stress field on distribution of quantum dots 期刊论文
Physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Zhang, CL;  Tang, L;  Wang, YL;  Wang, ZG;  Xu, B
收藏  |  浏览/下载:9/0  |  提交时间:2019/05/12


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