QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：湖南大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Analysis and simulation for current–voltage models of thin-film gated SOI lateral PIN photodetectors 期刊论文 Optik, 2014, 卷号: Vol.125 No.1, 页码: 540-544 作者:  Li, Guoli;  Zeng, Yun;  Hu, Wei;  Xia, Yu 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31 LPIN  Photodetector  SOI  Depletion voltage  Photocurrent   Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation 期刊论文 Optik, 2014, 卷号: Vol.125 No.21, 页码: 6483-6487 作者:  Li, Guoli;  Zeng, Yun;  Zou, Wanghui;  Xia, Yu 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31 Lateral PIN photodetector  SOI  Intrinsic length  Fully depleted  Gate voltage   Characterization of responsivity, sensitivity and spectral response in thin film SOI photo-BJMOS -FET compatible with CMOS technology 期刊论文 World Academy of Science, Engineering and Technology, 2009, 卷号: Vol.58, 页码: 227-231 作者:  Xie, Hai-Qing;  Zeng, Yun;  Yan, Yong-Hong;  Zeng, Jian-Ping;  Wang, Tai-Hong 收藏  |  浏览/下载：5/0  |  提交时间：2020/01/13 Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET 期刊论文 Proceedings of World Academy of Science, Engineering and Technology, 2009, 卷号: No.58 作者:  Xie, Hai-Qing;  Zeng, Yun;  Yan, Yong-Hong;  Zhang, Guo-Liang;  Wang, Tai-Hong 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/13 Photo-to-dark-current contrast ratio  Photo-current  Dark-current  Process parameter   Characterization of Responsivity, Sensitivity and Spectral Response in Thin Film SOI photo-BJMOS -FET Compatible with CMOSTechnology 期刊论文 Proceedings of World Academy of Science: Engineering and Technology, 2009, 卷号: No.58 作者:  Hai-Qing Xie;  Yun Zeng;  Yong-Hong Yan;  Jian-Ping Zeng;  Tai-Hong Wang 收藏  |  浏览/下载：1/0  |  提交时间：2020/01/13 Photo-BJMOSFET  Responsivity  Sensitivity  Spectral responseine   Characterization of responsivity, sensitivity and spectral response in thin film SOI photo-BJMOS -FET compatible with CMOS technology 期刊论文 World Academy of Science, Engineering and Technology, 2009, 卷号: Vol.34, 页码: 227-231 作者:  Xie, Hai-Qing;  Zeng, Yun;  Yan, Yong-Hong;  Zeng, Jian-Ping;  Wang, Tai-Hong 收藏  |  浏览/下载：1/0  |  提交时间：2020/01/13 Modeling and Electrical Simulations of Thin-Film Gated SOI Lateral PIN Photodetectors for High Sensitivity and Speed Performances 会议论文 17th CCF Annual Conference on Computer Engineering and Technology (NCCET), Xining, PEOPLES R CHINA, 2013 作者:  Li, Guoli;  Zeng, Yun;  Hu, Wei;  Xia, Yu;  Peng, Wei 收藏  |  浏览/下载：0/0  |  提交时间：2020/01/05 lateral PIN photodetector  SOI  intrinsic region  fully depleted  P-doping   Modeling and Electrical Simulations of Thin-Film Gated SOI Lateral PIN Photodetectors for High Sensitivity and Speed Performances 会议论文 COMPUTER ENGINEERING AND TECHNOLOGY, NCCET 2013, 235-243, 2013 作者:  Li, GL;  Zeng, Y;  Hu, W;  Xia, Y;  Peng, W 收藏  |  浏览/下载：0/0  |  提交时间：2020/01/05 lateral  PIN  photodetector  SOI  intrinsic  region  fully  depleted  P-doping