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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Targeted Genotyping Identifies Susceptibility Locus in Brain-derived Neurotrophic Factor Gene for Chronic Postsurgical Pain 期刊论文
ANESTHESIOLOGY, 2018, 卷号: 128, 期号: 3, 页码: 587-597
作者:  Tian, Yuanyuan;  Liu, Xiaodong;  Jia, Mingzhong;  Yu, Hui;  Lichtner, Peter
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM 期刊论文
PHILOSOPHICAL MAGAZINE, 2018, 卷号: 98, 期号: 34, 页码: 3072-3085
作者:  Zhang, Lei;  Portz, Verena;  Schnedler, Michael;  Jin, Lei;  Wang, Yuhan
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4surface passivation 期刊论文
Applied Physics A: Materials Science and Processing, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2017, 卷号: 11, 期号: 3-4, 页码: 184-188
作者:  Li, Jianfei;  Lv, Yuanjie;  Huang, Shulai;  Ji, Ziwu;  Pang, Zhiyong
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
AIP ADVANCES, 2017, 卷号: 7, 期号: 8
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Zhao, Jingtao;  Fu, Chen
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11

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