CORC

浏览/检索结果: 共199条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 466-470
Wang, H; Li, SL; Xiong, H; Wu, ZH; Dai, JN; Tian, Y; Fang, YY; Chen, CQ
收藏  |  浏览/下载:27/0  |  提交时间:2013/04/17
Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2012, 卷号: 55, 期号: 41308, 页码: 205-209
Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Liu, QB; Wang, HL; Wang, Y
收藏  |  浏览/下载:84/0  |  提交时间:2013/04/17
Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 卷号: 31, 期号: 5, 页码: 385-+
Wang, K; Gu, Y; Fang, X; Zhou, L; Li, C; Li, HSBY; Zhang, YG
收藏  |  浏览/下载:13/0  |  提交时间:2013/04/17
Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 44, 期号: 10, 页码: 1983-1987
Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Yan, JY; Wang, HL
收藏  |  浏览/下载:12/0  |  提交时间:2013/04/17
Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 卷号: 15, 期号: 1, 页码: 86-90
Li, SG; Gong, Q; Cao, CF; Wang, XZ; Chen, P; Yue, L; Liu, QB; Wang, HL; Ma, CH
收藏  |  浏览/下载:15/0  |  提交时间:2013/04/17
Spectral Research on an AlGaAs Epitaxial Material for a Terahertz Quantum-cascade Laser 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 卷号: 60, 期号: 8, 页码: 1267-1269
Tan, ZY; Cao, JC
收藏  |  浏览/下载:97/0  |  提交时间:2013/04/22
Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2012, 卷号: 55, 期号: 41308, 页码: 205-209
Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Liu, QB; Wang, HL; Wang, Y
收藏  |  浏览/下载:22/0  |  提交时间:2013/05/10
Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 44, 期号: 10, 页码: 1983-1987
Li, SG; Gong, Q; Cao, CF; Wang, XZ; Yue, L; Yan, JY; Wang, HL
收藏  |  浏览/下载:11/0  |  提交时间:2013/05/10
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 323, 期号: 1, 页码: 525-528
Teng,T; Ai,LK; Xu,AH; Sun,H; Zhu,FY; Qi,M
收藏  |  浏览/下载:17/0  |  提交时间:2012/04/10
Quantum dot lasers grown by gas source molecular-beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 323, 期号: 1, 页码: 450-453
Gong, Q; Chen, P; Li, SG; Lao, YF; Cao, CF; Xu, CF; Zhang, YG; Feng, SL(封松林); Ma, CH; Wang, HL
收藏  |  浏览/下载:10/0  |  提交时间:2012/04/10


©版权所有 ©2017 CSpace - Powered by CSpace