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Portable Heating System Basedona Liquid Metal Bathfor Rapid PCR 期刊论文
Acs Omega, 2022, 卷号: 7, 期号: 30, 页码: 26165-26173
作者:  K. N. Wang;  Q. R. Wang;  C. F. Peng;  Y. Guo;  Y. Li
收藏  |  浏览/下载：1/0  |  提交时间：2023/06/14
Quantum Dots Modified ZnO Based Fast-Speed Response Ultraviolet Photodetector 期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2022, 卷号: 49, 期号: 13
作者:  L. Sun;  D. Wang;  D. Fang;  X. Fang;  Z. Zhang
收藏  |  浏览/下载：9/0  |  提交时间：2023/06/14
Measurement of nitric oxide from cigarette burning using TDLAS based on quantum cascade laser 期刊论文
Optics and Laser Technology, 2020, 卷号: 124, 页码: 6
作者:  F. Zheng,X. B. Qiu,L. G. Shao,S. L. Feng,T. Cheng,X. H. He,Q. S. He,C. L. Li,R. F. Kan and C. Fittschen
收藏  |  浏览/下载：2/0  |  提交时间：2021/07/06
N x N Reconfigurable Nonblocking Polymer/Silica Hybrid Planar Optical Switch Matrix Based on Total-Internal-Reflection Effect 期刊论文
Ieee Photonics Journal, 2017, 卷号: 9, 期号: 4
作者:  Liang, L.;  K. Zhang;  C. T. Zheng;  X. Zhang;  L. Qin
收藏  |  浏览/下载：20/0  |  提交时间：2018/06/13
Fidelity of the diagonal ensemble signals the many-body localization transition 期刊论文
Physical Review E, 2016, 卷号: 94, 期号: 5
作者:  Hu, T. T.;  K. Xue;  X. D. Li;  Y. Zhang and H. Ren
收藏  |  浏览/下载：14/0  |  提交时间：2017/09/11
氧化锌微纳米结构的制备及新型光电器件的研制 学位论文
博士: 中国科学院大学, 2015
作者:  王登魁
收藏  |  浏览/下载：69/0  |  提交时间：2015/11/30
Silica/Polymer TIR Optical Switches and a Proposal for Nonblocking Four-Port Routers 期刊论文
Ieee Photonics Technology Letters, 2015, 卷号: 27, 期号: 6, 页码: 581-584
作者:  Zheng, C. T.;  L. Liang;  W. L. Ye;  D. M. Zhang and C. S. Ma
收藏  |  浏览/下载：12/0  |  提交时间：2016/07/15
Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
Liu K.; Shen D.; Zhang J.; Lu Y.; Jiang D.; Zhao Y.; Li B.; Zhao D.; Zhang Z.; Yao B.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..  

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