CORC

浏览/检索结果: 共21条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
VACUUM, 2016, 卷号: 129
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:17/0  |  提交时间:2017/03/11
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:15/0  |  提交时间:2017/03/11
Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 卷号: 6, 期号: 2
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:17/0  |  提交时间:2017/03/11
Current density dependence of transition energy in blue InGaN/GaN MQW LEDs 期刊论文
Physica Status Solidi (C) Current Topics in Solid State Physics, 2016
作者:  Zhang, F.(张峰);  Ikeda, M.;  Zhou, K.;  Liu, Z.S.;  Liu, J.P.(刘建平)
收藏  |  浏览/下载:23/0  |  提交时间:2017/03/11
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 97
作者:  Li, X;  Zhao, DG;  Yang, J;  Jiang, DS;  Liu, ZS
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/11
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Chen, P;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/11
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6
作者:  Bao, W;  Su, ZC;  Zheng, CC;  Ning, JQ(宁吉强);  Xu, SJ
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/11
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 5
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:17/0  |  提交时间:2015/12/31
Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 9
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:12/0  |  提交时间:2015/12/31
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 5, 页码: 6
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:18/0  |  提交时间:2015/12/31


©版权所有 ©2017 CSpace - Powered by CSpace