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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2 期刊论文
NANO LETTERS, 2021, 卷号: 21
作者:  Tan, Cheng;  Xie, Wen-Qiang;  Zheng, Guolin;  Aloufi, Nuriyah;  Albarakati, Sultan
收藏  |  浏览/下载：36/0  |  提交时间：2021/08/30
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1-xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes 期刊论文
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 卷号: Vol.17 No.4, 页码: 1399-1409
作者:  Liu, J;  Tang, CX;  Mo, PH;  Lu, JW
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26
Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1?xGex gate-all-around and fin field-effect transistors for sub-10?nm technology nodes 期刊论文
Journal of Computational Electronics, 2018, 卷号: Vol.17 No.4, 页码: 1399-1409
作者:  Liu, Jie;  Tang, Chuanxiang;  Mo, Pinghui;  Lu, Jiwu
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/26
Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants 期刊论文
CHINESE PHYSICS B, 2017, 卷号: Vol.26 No.9
作者:  Li, Chang-Sheng;  Ma, Lei;  Guo, Jie-Rong
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31
Gate-All-Around Silicon Nanowire Transistors with Channel-Last Process on Bulk Si Substrate 期刊论文
IEICE Electronics Express, 2015
作者:  Ma XL(马小龙);  Yin HX(殷华湘);  Hong PZ(洪培真)
收藏  |  浏览/下载：8/0  |  提交时间：2016/05/31
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors 期刊论文
ieee电子器件汇刊, 2015
Fan, Jiewen; Li, Ming; Xu, Xiaoyan; Yang, Yuancheng; Xuan, Haoran; Huang, Ru
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Cross-sectional shape effects of gate-all-around nanowire field-effect transistors 期刊论文
Journal of Computational and Theoretical Nanoscience, 2015, 卷号: 12, 期号: 12
作者:  Wang, Gaofeng;  Huang, Qijun;  He, Jin;  Chang, Sheng;  Wang, Hao
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05
Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4
Tian, JF; Chang, CZ; Cao, HL; He, K; Ma, XC; Xue, QK; Chen, YP
收藏  |  浏览/下载：13/0  |  提交时间：2015/04/14

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