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A short-channel SOI RF power LDMOS technology with TiSi2 salicide on dual sidewalls with cutoff frequency f(T) similar to 19.3 GHz 外文期刊
2006
作者:  Yang, R;  Li, JF;  Qian, H;  Lo, GQ;  Balasubramanian, N
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process 外文期刊
2006
作者:  Ma, XH;  Hao, Y;  Sun, BG;  Gao, HX;  Ren, HX
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Damascene W/TiN gate MOSFETs with improved performance for 0.1-mu m regime 外文期刊
2002
作者:  Li, RZ;  Xu, QX
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
New Ti-SALICIDE process using Sb and Ge preamorphization for sub-o.2 mu m CMOS technology 外文期刊
1998
作者:  Xu, QX;  Hu, CM
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26


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