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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of melt temperature on compressive plasticity of a Cu-Zr-Al bulk metallic glass 会议论文 ADVANCES IN SUPERALLOYS, PTS 1 AND 2, 2011-01-01 作者:  Xie, Sheng Hui;  Zeng, Xie Rong;  Fu, Dong Ju;  Zhao, Lei;  Hu, Qiang 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/06 Bulk metallic glasses  Melt temperature  Plastic Strain  Relaxed excess free volume (REFV)  Nano-crystallite   Effect of ion dose on growth of relaxed SiGe layer on ion implantation Si substrate 会议论文 JOURNAL OF RARE EARTHS, 8th China-Korea Workshop on Advanced Materials, Chengdu, PEOPLES R CHINA, Web of Science Chen, CC; Liu, ZH; Huang, WT; Dou, WZ; Xiong, XY; Zhang, W; Peihsin, T; Cao, JQ 收藏  |  浏览/下载：3/0 A new method of fabricating strained Silicon materials 会议论文 RARE METALS, 10th China/Korea Workshop on Advanced Materials, Huangshan, PEOPLES R CHINA, Web of Science Yang Zongren; Liang Renrong; Xu Jun 收藏  |  浏览/下载：2/0 Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文 27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27), salt lake city, utah, jan 16-20, 2000 Yang Z; Sou IK; Chen YH 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 REFLECTANCE DIFFERENCE SPECTROSCOPY  ZNSE/GAAS INTERFACE  STATES  GAAS   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES   Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 THREADING DISLOCATION  SI(100)  LAYERS  FILMS   Relaxed Ge0.97Sn0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain 会议论文 Hsinchu, Taiwan, April 27, 2015 - April 29, 2015 作者:  Liu, Mingshan[2];  Han, Genquan[1,2];  Liu, Yan[2];  Zhang, Chunfu[1];  Zhang, Jincheng[1] 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/30