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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Development and Application of a Micro-infrared Photoelasticity System for Stress Evaluation of Through-silicon Vias (TSV) 会议论文 2015 IEEE 65TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2015-01-01 作者:  Su, Fei;  Lan, Tianbao;  Pan, Xiaoxu;  Zhang, Zheng 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/06 Through-Silicon Vias (TSV)  stress  infrared photoelasticity  finite element analysis  hybrid method   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Probing process-induced defects in Si using infrared photoelastic stress measurement technique (EI收录) 会议论文 Materials Research Society Symposium Proceedings, San Francisco, CA, United states, March 28, 2005 - April 1, 2005 作者:  Liu, X.H.[1,3];  Wong, S.P.[1,3];  Peng, H.J.[1];  Ke, N.[1,3];  Zhao, Shounan[2] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/18 Birefringence  Photoelasticity  Silicon  Stress analysis