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Towards Ultra-Smooth Alkali Antimonide Photocathode Epitaxy 会议论文
Brazil, 2021
作者:  E.J. Montgomery;  O. Chubenko;  G.S. Gevorkyan;  S.S. Karkare;  P. Saha
收藏  |  浏览/下载：2/0  |  提交时间：2022/01/18
A 6.5kV FSRD structure with an epitaxial p buffer and diffused n buffer layers 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Wang, Cailin;  Li, Pu;  Su, Le;  Zhang, Lei
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/20
Origin analysis and elimination of obtuse triangular defects in 4° off 4H-SiC epitaxy 会议论文
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, WA, United states, 2017-09-17
作者:  Mao, K.L.;  Wang, Y.M.;  Li, B.;  Zhao, G.Y.
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20
Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes 会议论文
作者:  Jin C;  Wang FF;  Xu QQ;  Yu CZ;  Chen JX
收藏  |  浏览/下载：27/0  |  提交时间：2018/11/20
Microstructure characterization of lattice defects induced by As ion implantation in HgCdTe epilayers 会议论文
作者:  Shi CZ;  Lin C;  Wei YF;  Chen L
收藏  |  浏览/下载：22/0  |  提交时间：2018/11/20
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process 会议论文
作者:  Pons, M.;  Su, J.;  Chubarov, M.;  Boichot, R.;  Mercier, F.
收藏  |  浏览/下载：15/0  |  提交时间：2019/11/26
Bulk growth and magneto-optical property of K3B6O10Br polar crystal 会议论文
Conference of the International-Organization-for-Crystal-Growth (IOCG) held during the 18th International Conference on Crystal Growth and Epitaxy (ICCGE), Nagoya, JAPAN, 2017-06-15
作者:  Xia, Mingjun;  Li, Changsheng;  Li, R. K.
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/30
Study of Hetero-Tunneling gFET with an Ultra-shallow Pocket Junction 会议论文
作者:  Wang DH(王大海);  Xu GB(许高博);  Xu QX(徐秋霞);  Yin HX(殷华湘);  Zhao C(赵超)
收藏  |  浏览/下载：15/0  |  提交时间：2015/05/07
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate 会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:  Chang, Yongwei;  Chen, Da;  Di, Zengfeng;  Zhang, Miao;  Yu, Wenjie
收藏  |  浏览/下载：0/0  |  提交时间：2017/01/20
Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy 会议论文
International Symposium on Photoelectronic Detection and Imaging:Infrared Imaging and Applications, Beijing, 2013-06-25
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收藏  |  浏览/下载：19/0  |  提交时间：2014/11/11

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