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CORC

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Memory Devices Based on the Nanoparticle Silicon Floating gate double-barrier Structure 会议论文
1, 1, 1
Guo ZJ(郭招君); Zhaojun Guo 1, 2, a, Liqiang Guo 2, b, Guodong Wu 2, c
收藏  |  浏览/下载：12/0  |  提交时间：2013/12/16
Threshold voltage model for double gate p-IMOS 会议论文
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2013-01-01
作者:  Yao, Heming;  Foad, Saddam
收藏  |  浏览/下载：3/0  |  提交时间：2020/01/06
A self-consistent simulation of InSb double-gate MOSFETs using full-band tight-binding approach 会议论文
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 12th International Conference on Simulation of Semiconductor Processes and Devices, Vienna, AUSTRIA, Web of Science
Guan, Ximeng; Tan, Yaohua; Lu, Jing; Tian, Lilin; Wang, Yan; Yu, Zhiping
收藏  |  浏览/下载：3/0
Design of driving circuit for binocular CCD image system (EI CONFERENCE) 会议论文
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, April 26, 2010 - April 29, 2010, Dalian, China
Zhang M.; Ren J.; Zhang X.
收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25
The paper designs a driving circuit of high sensitive  wide dynamic and high signal-to-noise ratio for binocular CCD imaging system which adopts a Dalsa-made high resolution full-frame 33-mega pixels area CCD FTF5066M. Inner structure and driving timing of the FTF5066M sensor are presented. Field Programmable Gate Array (FPGA) is used as the main device to accomplish the timing design of the circuits and power driver control of the two sensors. By using the Correlated Double Sampling (CDS) technique  the video noise is reduced and the SNR of the system is increased. A 12- bit A/D converter is used to improve the image quality. The output rate of the imaging system designed with integrated chip can reach to 1.3 frames per second through bi-channel. For its good performance  low power consumption and small volume  the driving system can be applied to aeronautics and astronautics field. With a further improvement  a maximum data output rate of 2.7 frames per second can be reached through all the eight channels of the two CCDs. 2010 Copyright SPIE - The International Society for Optical Engineering.  
JFET SOS devices: Processing and gamma radiation effects 会议论文
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
作者:  Yu F
收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29
Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2]
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15
A physical model based on surface potential for double-gate a-Si:H TFTs (EI收录) 会议论文
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, December 25, 2009 - December 27, 2009
作者:  Liu, Yuan[1];  Yao, Ruo-He[2];  Li, Bin[2];  Xie, Wen-Niu[2]
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/17

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