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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication and properties of Cf-SiCnf/SiC compoistes 会议论文 the 3rd China International Congress on Composite Materials (第三届中国国际复合材料科技大会) 作者:  Sha JJ(沙建军) 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/03 Mechanical and property of SiCf-Ti3SiC2 composite synthesized by spark plasma sintering 会议论文 The first international conference on testing and evaluation of inorganic materials. Jingdezhen, China, 江西景德镇, 2012-10-15 Hu CF(胡春峰) 收藏  |  浏览/下载：7/0  |  提交时间：2013/12/16 Study on Composition and Structure Evolution of Continuous Cured Polyferrocarbosilane Fibers during the Process of Inorganic Transformation 会议论文 7th National Conference on Functional Materials and Applications, Hunan, PEOPLES R CHINA, OCT, 2010 作者:  Chen, Zhi-yan*;  Wang, Jun;  Li, Xiao-dong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/28 continuous air-cured PFCS fibers  continuous SiC(Fe) radar-wave absorbing fibers  inorganic transformation  structural evolution  polymer-derived method   Formation of Cf/C composites with SiC concentration gradient on the n surface by SHCLD technique 会议论文 Asian Pacific Conference for Fracture and Strength (APCFS'06), 22 November 2006 through 25 November 2006 作者:  Chen, Guangli;  Geng, Haoran;  Chen, Junhua;  Li, Hui;  Guo, Zhongquan 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31 Antioxidation  Cf/C composites  Flexural strength  SHCLD technique  SiC concentration gradient   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes