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Improving Performance of Pentacene Field-effect Transistors by Optimizing Substrate Temperature and Active Layer Thickness 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Li, Shi-guang;  Chen, Peng-hui;  Liu, Le
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20
Lateral thermal dissipation of InP-based InGaAsP ridge waveguide laser 会议论文
Beijing, China, 2018-10-12
作者:  Li, Xiao;  Qiu, Bocang;  Ruiying, Zhang;  Yue, Zhao
收藏  |  浏览/下载：38/0  |  提交时间：2019/03/12
Active layer stratigraphy and organic layer thickness at a thermokarst site in Arctic Alaska identified using ground penetrating radar 会议论文
2013 International Cryospheric Science Conference, Sanya City, PEOPLES R CHINA, OCT, 2013
作者:  Gusmeroli, A;  Liu, L;  Schaefer, K;  Zhang, TJ;  Schaefer, T
收藏  |  浏览/下载：3/0  |  提交时间：2017/01/18
Multiscale modeling and simulation for optimizing polymer bulk heterojunction solar cells 会议论文
2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United states, June 3-8, 2012
作者:  Wei FN(魏发南);  Liu, Liming;  Liu LQ(刘连庆);  Li GY(李广勇)
收藏  |  浏览/下载：15/0  |  提交时间：2014/04/16
Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE) 会议论文
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
Jin W.; Jin C.; Zhu H.; Liu L.; Yang H.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25
Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First  Second  Third  alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method  Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra  based on the acquired structure information  the structure information (the thickness of the aluminum and the cap layer  the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally  surface roughness and the diffusion between Al-Al2O 3) is obtained  an induced transmission filter (ITF) is designed and deposited.  
Support system design of the sub-mirror cell of the LAMOST Schmidt plate 会议论文
Orlando, FL, 2006-5-24
Dehua Yang; Fanghua Jiang
收藏  |  浏览/下载：15/0  |  提交时间：2013/12/28
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
Active shock-tube-diaphragm rupture with laser beam irradiation 会议论文
42nd AIAA Aerospace Sciences Meeting and Exhibit, Reno, NV, United states, January 5, 2004 - January 8, 2004
作者:  Takahashi T;  Watanabe K;  Sasoh A;  Torikai H;  Yang QS(杨乾锁)
收藏  |  浏览/下载：13/0  |  提交时间：2017/06/01
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Xu Y; Zhu XP; Ye XJ; Kang XN; Cao Q; Guo L; Chen LH
收藏  |  浏览/下载：17/1  |  提交时间：2010/10/29
A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth 会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
Zhang RY; Dong J; Zhou F; Zhu HL; Shu HY; Bian J; Wang LF; Tian HL; Wang W
收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29

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