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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Controllable growth of semiconductor nanometer structures 会议论文 conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002 Wang ZG; Wu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 INAS QUANTUM DOTS  SELF-ORGANIZATION  MONOLAYER COVERAGE  DENSITY  GAAS  ISLANDS  INP(001)  EPITAXY   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文 1999 ieee hong kong electron devices meeting (hkedm 99), shatin, hong kong, 36337 作者:  Xu B 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Wang GH; Ma XY; Zhang YF; Peng HI; Wang ST; Li YZ; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 LED  coupled distributed Bragg reflector  MOCVD  AlGaInP