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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching   The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW 收藏  |  浏览/下载：176/36  |  提交时间：2010/03/29 porous silicon   Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：135/48  |  提交时间：2010/03/29 SI(111)  ALN   Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Tan LW; Wang J; Wang QY; Yu YH; Lin LY 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 EPITAXIAL-GROWTH  AL2O3  SI   Epitaxial growth of SiC on complex substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS