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科研机构
半导体研究所 [25]
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会议论文 [25]
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2010 [1]
2008 [3]
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半导体材料 [17]
光电子学 [4]
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半导体物理 [2]
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内容类型:会议论文
专题:半导体研究所
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Donor defect in P-diffused bulk ZnO single crystal
会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
收藏
  |  
浏览/下载:461/158
  |  
提交时间:2010/10/11
Zinc Oxide
doping
defect
Thermal test and analysis of concentrator solar cells - art. no. 684117
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Cui M
;
Chen NF
;
Wu JL
;
Liu L
;
Wang P
;
Wang YS
;
Bai YM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
temperature
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/03/09
zinc oxide
X-ray diffraction
defects
single crystal
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
zinc oxide
defect
vacancy
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:103/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Yang, ZX
收藏
  |  
浏览/下载:202/19
  |  
提交时间:2010/03/29
indium phosphide
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:166/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Electron irradiation-induced defects in InP pre-annealed at high temperature
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhao, YW (Zhao, Y. W.)
;
Dong, ZY (Dong, Z. Y.)
;
Deng, AH (Deng, A. H.)
收藏
  |  
浏览/下载:158/28
  |  
提交时间:2010/03/29
indium phosphide
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
收藏
  |  
浏览/下载:220/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
收藏
  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
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