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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 EMISSION   Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang) 收藏  |  浏览/下载：87/29  |  提交时间：2010/03/29 polycrystalline 3C-SiC  resonator  doping  SILICON-CARBIDE   Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/15 Czochralski method  growth from melt  semiconductor silicon  argon gas flow  computer simulation  oxygen content  FURNACE PRESSURE   Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 作者:  Zhao DG 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 cubic GaN  buffer layer  atomic force microscopy  reflection high-energy electron diffraction  MOVPE   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility