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长春光学精密机械与... [18]

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限定条件	内容类型：会议论文专题：长春光学精密机械与物理研究所第一署名单位第一作者单位通讯作者单位

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	Study on key operating parameters of diode-pumped Cs vapor laser 会议论文 20th International Symposium on High Power Systems and Applications 2014, Chengdu, August 25 作者: Chen, Fei; Gao, Fei; Xu, Yan; Xie, Ji-Jiang; Li, Dian-Jun 收藏 \| 浏览/下载：17/0 \| 提交时间：2016/07/18
	High power semiconductor laser beam combining technology and its applications 会议论文 2nd International Symposium on Laser Interaction with Matter, LIMIS 2012, September 9, 2012 - September 12, 2012, Xi'an, Shaanxi, China Lijun W.; Cunzhu T.; Hangyu P.; Jun Z. 收藏 \| 浏览/下载：11/0 \| 提交时间：2014/05/15
	Influence of the helium-pressure on diode-pumped alkali-vapor laser 会议论文 2nd International Symposium on Laser Interaction with Matter, LIMIS 2012, September 9, 2012 - September 12, 2012, Xi'an, Shaanxi, China Gao F.; Chen F.; Xie J.-J.; Zhang L.-M.; Li D.-J.; Yang G.-L.; Guo J. 收藏 \| 浏览/下载：17/0 \| 提交时间：2014/05/15
	High power Bragg reflection waveguide diode lasers with twin near-circular emission spots (EI CONFERENCE) 会议论文 2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012, July 9, 2012 - July 11, 2012, Seattle, WA, United states Tong C.; Wang L.; Yang Y.; Zeng Y.; Wang L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 A novel semiconductor laser with two symmetrical near-circular emission spots separated at an angle of 62 was demonstrated using Bragg reflection waveguide. The low beam divergence of 5.4 and power of 2.6 W were achieved. 2012 IEEE.
	KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China Shan X.; Zhang J.; Peng H.; Fu X.; Liu Y.; Wang L. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 With the advantages of small volume light weight high efficiency and long lifespan diode laser has been widely applied to industrial processing. Presently for laser used as processing light source needs to amount to dozens of KW per cm2 of power density how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output coupling efficiency at 90% 11mm2 of light spot through experiments which enables diode laser to be directly applied to cladding welding and so on. 2012 IEEE.
	High power diode laser with beam coupling (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Gu Y.; Wang L.; Feng G.; Shan X.; Yin H.; Liu Y. 收藏 \| 浏览/下载：52/0 \| 提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.
	Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Yan C.; He C.; Lu G.; Qin L. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 Firstly the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given and the output characteristic was simple calculated. Then in experiment the VECSELs were grown bonded on to the heat sink and optically pumped by high-power 808nm diode laser array with fiber output module the light emission spectra were measured. Finally The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L. 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle the average driving power in the laser chip is quite low so the heating effect cemiconductor laser is very small using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.
	High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China Lu G. G.; He C. F.; Shan X. N.; Qin L.; Yan C. L.; Ning Y. Q.; Wang L. J. 收藏 \| 浏览/下载：12/0 \| 提交时间：2013/03/25 We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode. 2006 IEEE.

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