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长春光学精密机械与物... [1]
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会议论文 [1]
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2005 [1]
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内容类型:会议论文
专题:长春光学精密机械与物理研究所
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Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)
会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.
;
Lu Y. M.
;
Shen D. Z.
;
Yan J. F.
;
Li B. H.
;
Zhang J. Y.
;
Liu Y. C.
;
Fan X. W.
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提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that
below 500 C
ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra
ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature
which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown
which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
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