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| Tin-zinc-bismuth lead-free solder alloy for soldering aluminum-copper comprises zinc, bismuth, aluminum, nickel, and/or tin. 专利 申请日期: 2014-01-01, 公开日期: 2014-04-23 作者: HUANG M ZHANG F ZHAO N ZHANG T YANG Y
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11 |
| Tin zinc nickel lead-free solder alloy for aluminum and copper soldering, has zinc, and nickel in specified amounts. 专利 申请日期: 2014-01-01, 公开日期: 2014-04-09 作者: HUANG M ZHAO J ZHAO N MA H DONG C H
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| Weakly alkaline tin-base lead-free solder composite plating solution for optoelectronic industry, comprises stannous pyrophosphate, potassium citrate, potassium pyrophosphate, cobaltous sulfate, metal particles and surfactant. 专利 申请日期: 2013-01-01, 公开日期: 2013-06-05 作者: HUANG M PAN J ZHANG T MA H ZHAO J Z
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| Tin-zinc-based near eutectic lead-free solder alloy for aluminum soft soldering, comprises specified amount of zinc, aluminum and tin. 专利 申请日期: 2012-01-01, 公开日期: 2012-12-12 作者: KANG N ZHOU Q HUANG M DONG C ZHAO N
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| Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays 专利 专利号: US5028563, 申请日期: 1991-07-02, 公开日期: 1991-07-02 作者: FEIT, ZEEV; KOSTYK, DOUGLAS; WOODS, ROBERT J.
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24 |
| Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays 专利 专利号: US4943971, 申请日期: 1990-07-24, 公开日期: 1990-07-24 作者: FIET, ZEEV; KOSTYK, DOUGLAS; WOODS, ROBERT J.
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:5/0  |  提交时间:2019/12/26 |
| Semiconductor laser element 专利 专利号: JP1989280387A, 申请日期: 1989-11-10, 公开日期: 1989-11-10 作者: NISHIJIMA YOSHITO; EBE KOJI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18 |
| Formation of lead/tin solder layer 专利 专利号: JP1989276648A, 申请日期: 1989-11-07, 公开日期: 1989-11-07 作者: ANDO SHINJI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:8/0  |  提交时间:2019/12/31 |
| Semiconductor light emitting device 专利 专利号: JP1988233586A, 申请日期: 1988-09-29, 公开日期: 1988-09-29 作者: NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI; HARA TOSHITAMI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2020/01/13 |
| Semiconductor laser 专利 专利号: JP1986078187A, 申请日期: 1986-04-21, 公开日期: 1986-04-21 作者: ITO TATSUYA; HASHIMOTO HIROKAZU
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:12/0  |  提交时间:2020/01/13 |