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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan
收藏  |  浏览/下载：39/0  |  提交时间：2018/05/14
Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 6, 页码: 67807
Sui, YP; Yu, GH
收藏  |  浏览/下载：11/0  |  提交时间：2012/04/10
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: 77304-77304
Gu, Y; Wang, K; Li, YY; Li, C; Zhang, YG
收藏  |  浏览/下载：13/0  |  提交时间：2011/11/03
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211
Chen, T; Hong, T; Pan, JQ; Chen, WX; Cheng, YB; Wang, Y; Ma, XB; Liu, WL; Zhao, LJ; Ran, GZ; Wang, W; Qin, GG
收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24
Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate 期刊论文
CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 卷号: 6, 期号: 3, 页码: 638-642
Li, H; Sang, JP; Liu, C; Lu, HB; Cao, JC
收藏  |  浏览/下载：21/0  |  提交时间：2011/12/02
Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 2, 页码: 726-729
Gu, Y; Zhang, YG(张永刚）
收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24
Strain compensated AlInGaAs/InGaAs/InAs triangular quantum wells for lasing wavelength beyond 2 mu m 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 11, 页码: 3237-3240
Gu, Y; Zhang, YG(张永刚）; Liu, S
收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24
Microstructural properties of single crystalline PbTe thin films grown on BaF2(111) by molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 9, 页码: 2353-2356
Si, JX; Wu, HZ; Xu, TN; Cao, CF; Huang, ZC
收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24
InGaAs photodetectors cut-off at 1.9 mu m grown by gas-source molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 1, 页码: 250-253
Zhang, YG(张永刚）; Hao, GQ; Gu, Y; Zhu, C; Li, AZ; Liu, TD
收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24
InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 卷号: 46, 页码: S229-S232
Chen, XJ; Xu, AH; Ai, LK; Qi, M
收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24

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