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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A fast-settling frequency-presetting PLL frequency synthesizer with process variation compensation and spur reduction 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 4, 页码: 99-103 Yan Xiaozhou; Kuang Xiaofei; Wu Nanjian 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/23 Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, N; Li, N; Liu, ZL; Yu, F; Li, GH 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 SOI  MOSFET   A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node 期刊论文 半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1917-1921 Zhang Wancheng; Wu Nanjian 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23 Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 12, 页码: art. no. 125015 Wang, NJ; Li, N; Liu, ZL; Yu, F 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08 Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 10, 页码: 1750-1754 Xiao Zhiqiang; Hong Genshen; Zhang Bo; Liu Zhongli 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/23 Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)   Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：127/22  |  提交时间：2010/03/29 SIMOX  fluorine  ionizing radiation