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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 neutron irradiation  annealing  defects in silicon  SPECTRA   Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 期刊论文 chinese physics, 2002, 卷号: 11, 期号: 5, 页码: 492-495 Wang YQ; Liao XB; Diao HW; Zhang SB; Xu YY; Chen CY; Chen WD; Kong GL 收藏  |  浏览/下载：102/13  |  提交时间：2010/08/12 polycrystalline silicon film  rapid thermal processing  microstructure  CHEMICAL-VAPOR-DEPOSITION  AMORPHOUS-SILICON  PRESSURE  TRANSISTORS  CRYSTALLIZATION  GROWTH   Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes 会议论文 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 Lu LW; Zhang YH; Xu ZT; Xu ZY; Wang ZG; Wang J; Ge WK 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/15 First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF