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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503 作者:  Jiang XW 收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  SEMICONDUCTOR-DEVICES  SILICON DEVICES  MONTE-CARLO  MOSFETS  NANOTRANSISTORS  APPROXIMATION  EQUATIONS  DESIGN  MODELS   First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO 期刊论文 physics letters a, 2010, 卷号: 374, 期号: 10, 页码: 1292-1296 Shi LJ (Shi Li-Jie) 收藏  |  浏览/下载：18/3  |  提交时间：2010/04/13 Ferromagnetism  Half-metal  Double-exchange mechanism  TEMPERATURE FERROMAGNETISM  ELECTRIC PROPERTIES  ZNO FILMS  II-VI  SEMICONDUCTORS  SPINTRONICS  MODEL  SPIN  GAS   Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101 Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming) 收藏  |  浏览/下载：101/3  |  提交时间：2010/05/24 SIMULATION  TRANSISTORS  LIMIT  NM   Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors 期刊论文 physical review letters, 2009, 卷号: 102, 期号: 1, 页码: art. no. 017201 作者:  Li JB 收藏  |  浏览/下载：393/60  |  提交时间：2010/03/08 COLLECTIVE ELECTRON FERROMAGNETISM  ENERGY  MODEL   Numerical analysis of LEC growth of GaAs with an axial magnetic field 期刊论文 international journal of heat and mass transfer, 2002, 卷号: 45, 期号: 13, 页码: 2843-2851 Li MW; Hu WR; Chen NH; Zeng DL; Tang ZM 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 liquid encapsulant Czochralski (LEC)  growth of GaAs  magnetic field finite-element method  boron oxide  CRYSTAL-GROWTH  HEAT-TRANSFER  CONVECTION  FLOW  SIMULATION  MODEL   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF