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科研机构
半导体研究所 [17]
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期刊论文 [14]
会议论文 [3]
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2011 [1]
2010 [1]
2008 [3]
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半导体物理 [17]
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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:
Li MF
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浏览/下载:106/7
  |  
提交时间:2011/07/05
molecular beam epitaxy
anti-phase domain
GaAs/Ge interface
CHEMICAL VAPOR-DEPOSITION
JUNCTION SOLAR-CELLS
DOMAIN-FREE GROWTH
TEMPERATURE
QUALITY
FUTURE
Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
期刊论文
vacuum, 2010, 卷号: 84, 期号: 11, 页码: 1280-1286
Zhu BL (Zhu B. L.)
;
Zhao XZ (Zhao X. Z.)
;
Su FH (Su F. H.)
;
Li GH (Li G. H.)
;
Wu XG (Wu X. G.)
;
Wu J (Wu J.)
;
Wu R (Wu R.)
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  |  
浏览/下载:91/2
  |  
提交时间:2010/07/05
ZnO
Pulsed laser deposition (PLD)
Annealing treatment
Photoluminescence (PL)
OXIDE THIN-FILMS
SUBSTRATE-TEMPERATURE
OXYGEN-PRESSURE
ELECTRICAL-PROPERTIES
PLD TECHNIQUE
AL FILMS
EMISSION
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ
;
Zeng, YP
;
Wang, XL
;
Liu, HX
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  |  
浏览/下载:19/0
  |  
提交时间:2010/03/08
RHEED
INTERLAYER
PRESSURE
NITRIDES
LAYERS
MBE
Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)
期刊论文
光子学报, 2008, 卷号: 37, 期号: 6, 页码: 1107-1111
NIU Zhihong
;
REN Zhengwei
;
HE Zhenhong
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/23
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD
期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ
;
Wang, XL
;
Guo, LC
;
Xiao, HL
;
Wang, CM
;
Ran, JX
;
Li, JP
;
Li, JM
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  |  
浏览/下载:84/1
  |  
提交时间:2010/03/08
gallium nitride crack
low temperature aluminum nitride
interlayer
silicon
Growth parameter dependence of magnetic property of CrAs thin film
期刊论文
chinese physics, 2007, 卷号: 16, 期号: 12, 页码: 3868-3872
作者:
Zheng YH
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浏览/下载:42/2
  |  
提交时间:2010/03/08
magnetic films
Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084
Hao RT (Hao Ruiting)
;
Xu YQ (Xu Yingqiang)
;
Zhou ZQ (Zhou Zhiqiang)
;
Ren ZW (Ren Zhengwei)
;
Ni HQ (Ni Haiqiao)
;
He ZH (He Zhenhong)
;
Niu ZC (Niu, Zhichuan)
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  |  
浏览/下载:92/0
  |  
提交时间:2010/03/29
INFRARED PHOTODIODES
Surface morphology evolution of strained InAs/GaAs(331)a films
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Gong, M (Gong, Meng)
;
Fang, ZD (Fang, Zhidan)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
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  |  
浏览/下载:118/36
  |  
提交时间:2010/03/29
surface morphology evolution
InAs nanostructures
island-pit pairs
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
COOPERATIVE NUCLEATION
HETEROEPITAXY
TRANSITION
ISLANDS
GROWTH
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
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  |  
浏览/下载:82/21
  |  
提交时间:2010/03/29
atomic hydrogen
molecular beam epitaxy
step arrays
MOLECULAR-BEAM EPITAXY
ATOMIC-HYDROGEN
VICINAL SURFACE
QUANTUM DOTS
GROWTH
TEMPERATURE
IRRADIATION
MECHANISM
MBE
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z
;
Niu ZC
;
Fang ZD
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  |  
浏览/下载:73/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
QUANTUM-DOT SUPERLATTICES
VICINAL GAAS(001)
GAAS
WIRES
POLARIZATION
GROWTH
WELLS
TEMPERATURE
MECHANISM
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