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半导体研究所 [13]

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半导体物理 [13]

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限定条件	学科主题：半导体物理

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	Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文 nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359 作者: Tan PH 收藏 \| 浏览/下载：52/5 \| 提交时间：2011/07/05 CdSe nanowires photoluminescence CHEMICAL-VAPOR-DEPOSITION SHAPE-SELECTIVE SYNTHESIS LIQUID-SOLID MECHANISM OPTICAL-PROPERTIES SILICON NANOWIRES SI NANOWIRES ZNSE NANOWIRES SEMICONDUCTOR NANOCRYSTALS STRUCTURAL-PROPERTIES EPITAXIAL-GROWTH
	Influence of window layer thickness on double layer antireflection coating for triple junction solar cells 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001 Wang, Lijuan; Zhan, Feng; Yu, Ying; Zhu, Yan; Liu, Shaoqing; Huang, Shesong; Ni, Haiqiao; Niu, Zhichuan 收藏 \| 浏览/下载：21/0 \| 提交时间：2012/06/14 Antireflection coatings Coatings Gallium Optimization Silicon compounds Titanium dioxide Transfer matrix method Zinc sulfide
	Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文 acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971 作者: Li JB 收藏 \| 浏览/下载：63/1 \| 提交时间：2010/04/22 Twinning Nanotructures Fracture Buckling Molecular dynamics CHEMICAL-VAPOR-DEPOSITION AB-INITIO CALCULATIONS BETA-SIC NANOWIRES LOW-TEMPERATURE THIN-FILMS SIMULATION ELASTICITY NANOTUBES POLYTYPES GROWTH
	Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211 作者: Wang Y; Pan JQ 收藏 \| 浏览/下载：112/0 \| 提交时间：2010/03/08 CHEMICAL VAPOR-DEPOSITION WAVE-GUIDE CIRCUIT DOUBLE HETEROSTRUCTURES SILICON SUBSTRATE CW OPERATION WAFER DEVICES FILMS
	Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文 nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708 作者: Li JB 收藏 \| 浏览/下载：164/21 \| 提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION SILICON-CARBIDE NANOTUBES FORMATION ENERGIES CARBON NANOTUBES BORON-NITRIDE NANOWIRES COMPOSITES DEFECTS FUSION
	Localized exciton dynamics in AlInGaN alloy 期刊论文 solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏 \| 浏览/下载：42/0 \| 提交时间：2010/08/12 AlInGaN quantum dots hopping stretched-exponential decay MULTIPLE-QUANTUM WELLS LIGHT-EMITTING-DIODES TIME-RESOLVED PHOTOLUMINESCENCE CHEMICAL-VAPOR-DEPOSITION THERMAL-ACTIVATION LUMINESCENCE TRANSITIONS RELAXATION SILICON LAYERS
	Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 期刊论文 chinese physics, 2002, 卷号: 11, 期号: 5, 页码: 492-495 Wang YQ; Liao XB; Diao HW; Zhang SB; Xu YY; Chen CY; Chen WD; Kong GL 收藏 \| 浏览/下载：102/13 \| 提交时间：2010/08/12 polycrystalline silicon film rapid thermal processing microstructure CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON PRESSURE TRANSISTORS CRYSTALLIZATION GROWTH
	Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film 期刊论文 acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570 Wang YQ; Chen WD; Chen CY; Diao HW; Zhang SB; Xu YY; Kong GL; Liao XB 收藏 \| 浏览/下载：45/0 \| 提交时间：2010/08/12 silicon-rich silicon oxide microstructure light-emission rapid thermal annealing CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON POROUS SILICON SI LUMINESCENCE NANOCRYSTALS SPECTRA SYSTEM
	Microstructure of a-SiOx : H 期刊论文 science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 10, 页码: 1320-1328 Wang YQ; Liao XB; Diao HW; Cheng WC; Li GH; Chen CY; Zhang SB; Xu YY; Chen WD; Kong GL 收藏 \| 浏览/下载：43/0 \| 提交时间：2010/08/12 a-SiOx : H microstructure bonding configuration CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON ELECTRONIC-PROPERTIES SIO2/SI INTERFACE OXYGEN FILMS VIBRATIONS ALLOYS SYSTEM
	Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD 期刊论文 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 777-782 Zheng XH; Qu B; Wang YT; Dai ZZ; Yang H; Liang JW 收藏 \| 浏览/下载：95/12 \| 提交时间：2010/08/12 3C-SiC microtwins X-ray four-circle diffractometer APCVD CHEMICAL-VAPOR-DEPOSITION SILICON-CARBIDE PHASE EPITAXY THIN-FILMS GAN SI SUBSTRATE DEFECTS NITRIDE MBE

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