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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文 journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148 Yang GD; Zhu F; Dong S 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 Diffusion  Physical vapor deposition processes  Magnetic materials  Semiconducting III-V materials  GASB/MN DIGITAL ALLOYS  ROOM-TEMPERATURE FERROMAGNETISM  RAMAN-SCATTERING  MAGNETOTRANSPORT PROPERTIES  EPITAXIAL LAYERS  THIN-FILMS  SEMICONDUCTORS  STRAIN  MAGNETOELECTRONICS  SPINTRONICS   Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Mutual passivation of donors and isovalent nitrogen in GaAs 期刊论文 physical review letters, 2006, 卷号: 96, 期号: 3, 页码: art.no.035505 Li J; Carrier P; Wei SH; Li SS; Xia JB 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 DILUTED GANXAS1-X ALLOYS  GROUP-IV DONORS  SEMICONDUCTOR ALLOYS  OPTICAL-PROPERTIES  BAND  GAN(X)AS1-X  IMPURITIES  HYDROGEN   The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529 作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ 收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11 molecular beam epitaxy  quantum wells  semiconducting III-V materials  MU-M  LASERS  TEMPERATURE  SURFACTANT  NM   Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells 期刊论文 solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 287-292 Wan SP; Xia JB 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 quantum wells  semiconductors  piezoelectricity  optical properties  OPTICAL-ABSORPTION  GAN  HETEROSTRUCTURES  SPECTROSCOPY  CONSTANTS  ENERGIES  LIFETIME  SPECTRA  FIELDS  INN   Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells 期刊论文 journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6210-6216 Wan SP; Xia JB; Chang K 收藏  |  浏览/下载：123/9  |  提交时间：2010/08/12 FIELD-EFFECT TRANSISTORS  RECOMBINATION DYNAMICS  WIDTH DEPENDENCE  GAN  EXCITONS  ABSORPTION  SPECTRA  SEMICONDUCTORS  LUMINESCENCE  CONSTANTS