CORC

在结果中检索

CORC

浏览/检索结果: 共13条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei)
收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07
ALLOYS  GE  
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08
First-principles study of transition metal impurities in Si 期刊论文
physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201
Zhang ZZ; Partoens B; Chang K; Peeters FM
收藏  |  浏览/下载：61/7  |  提交时间：2010/03/08
Exciton localization due to isoelectronic substitution in ZnSTe 期刊论文
journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 402-404
Xu ZY; Yang XD; Sun Z; Sun BQ; Ji Y; Li GH; Sou IK; Ge WK
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Mutual passivation of donors and isovalent nitrogen in GaAs 期刊论文
physical review letters, 2006, 卷号: 96, 期号: 3, 页码: art.no.035505
Li J; Carrier P; Wei SH; Li SS; Xia JB
收藏  |  浏览/下载：71/0  |  提交时间：2010/04/11
A study of the growth and optical properties of AlInGaN alloys 期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637
Huang JS; Dong X; Lu XL; Xu ZY; Ge WK
收藏  |  浏览/下载：265/14  |  提交时间：2010/08/12
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4211-4214
Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM
收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12
Optical properties of AIInGaN quaternary alloys 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29
Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate 期刊论文
solid state communications, 1999, 卷号: 112, 期号: 5, 页码: 255-259
Si JJ; Guo LW; Yang QQ; Gao JH; Teng D; Zhou JM; Wang QM
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12
Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers 期刊论文
journal of physics-condensed matter, 1999, 卷号: 11, 期号: 6, 页码: 1631-1637
Xu J; He ZH; Chen KJ; Huang XF; Feng D
收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace