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Electron tunneling through double magnetic barriers on the surface of a topological insulator 期刊论文
physical review b, 2010, 卷号: 82, 期号: 11, 页码: art. no. 115211
Wu ZH (Wu Zhenhua); Peeters FM (Peeters F. M.); Chang K (Chang Kai)
收藏  |  浏览/下载:21/0  |  提交时间:2010/11/02
Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109
Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS
收藏  |  浏览/下载:53/4  |  提交时间:2010/03/08
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:  Chen L
收藏  |  浏览/下载:74/0  |  提交时间:2010/03/08
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载:85/0  |  提交时间:2010/04/11
Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705
Chi F; Li SS
收藏  |  浏览/下载:94/0  |  提交时间:2010/04/11
Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 11, 页码: 1510-1512
作者:  Yu LJ
收藏  |  浏览/下载:605/10  |  提交时间:2010/08/12
Selectively excited photoluminescence of GaAs1-xNx single quantum wells 期刊论文
journal of applied physics, 2003, 卷号: 94, 期号: 8, 页码: 4863-4865
作者:  Tan PH
收藏  |  浏览/下载:142/0  |  提交时间:2010/08/12
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
solid-state electronics, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
作者:  Han PD
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:  Ye XL
收藏  |  浏览/下载:65/0  |  提交时间:2010/08/12


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