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CORC

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Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载：65/11  |  提交时间：2010/03/08
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: art.no.107302
Wang H (Wang Hui); Zhu JH (Zhu Ji-Hong); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：157/39  |  提交时间：2010/03/08
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:  Wei HY;  Jiao CM;  Song HP
收藏  |  浏览/下载：235/41  |  提交时间：2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08
Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides 期刊论文
physical review b, 2008, 卷号: 77, 期号: 11, 页码: art. no. 113202
Wang, F; Li, JB; Li, SS; Xia, JB; Wei, SH
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08
Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure 期刊论文
journal of infrared and millimeter waves, 2007, 卷号: 26, 期号: 2, 页码: 81-84
Zhu, H (Zhu Hui); Zheng, HZ (Zheng Hou-Zhi); Li, GR (Li Gui-Rong); Tan, PH (Tan Ping-Heng); Gan, HD (Gan Hua-Dong); Xu, P (Xu Ping); Zhang, F (Zhang Fei); Zhang, H (Zhang Hao); Xiao, WB (Xiao Wen-Bo); Sun, XM (Sun Xiao-Ming)
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/29
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF; Chen WD; Xu ZJ; Xu XR
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type GaAs layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 242-246
Zhou, X; Zheng, HZ; Li, GR; Hu, B; Gan, HD; Zhu, H
收藏  |  浏览/下载：45/19  |  提交时间：2010/03/17
Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
journal of applied physics, 2004, 卷号: 95, 期号: 8, 页码: 4362-4366
Lu, W; Li, DB; Li, CR; Shen, F; Zhang, Z
收藏  |  浏览/下载：303/45  |  提交时间：2010/03/09

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