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| Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者: Tan PH
  收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏 | 浏览/下载：85/0 | 提交时间：2010/04/11
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| Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者: Yang XH
收藏 | 浏览/下载：29/0 | 提交时间：2010/04/11
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| Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者: Wu DH; Niu ZC; Jiang DS; Xu YQ
收藏 | 浏览/下载：81/0 | 提交时间：2010/04/11
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| ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文
plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG
收藏 | 浏览/下载：78/7 | 提交时间：2010/08/12
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| Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2488-2490
作者: Xu YQ
收藏 | 浏览/下载：68/3 | 提交时间：2010/08/12
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| High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 5, 页码: 659-661
Pan Z; Li LH; Du Y; Lin YW; Wu RH
收藏 | 浏览/下载：69/4 | 提交时间：2010/08/12
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| Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
applied physics letters, 2000, 卷号: 77, 期号: 9, 页码: 1280-1282
Pan Z; Li LH; Zhang W; Lin YW; Wu RH; Ge W
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy 期刊论文
applied physics letters, 2000, 卷号: 77, 期号: 2, 页码: 214-216
Pan Z; Li LH; Zhang W; Lin YW; Wu RH
收藏 | 浏览/下载：51/0 | 提交时间：2010/08/12
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| Heteroepitaxy of cubic GaN: influence of interface structure 期刊论文
microscopy of semiconducting materials 1997, 1997, 卷号: 157, 期号: 0, 页码: 205-208
Trampert A; Brandt O; Yang H; Yang B; Ploog KH
收藏 | 浏览/下载：33/0 | 提交时间：2010/08/12
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