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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG
收藏  |  浏览/下载:54/6  |  提交时间:2010/03/08
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation 期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 9, 页码: 6021-6026
Sun ZZ; Yoon SF; Wu J; Wang ZG
收藏  |  浏览/下载:81/9  |  提交时间:2010/08/12
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4423-4426
Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG
收藏  |  浏览/下载:84/0  |  提交时间:2010/08/12
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 1, 页码: 533-536
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
physica e, 2000, 卷号: 8, 期号: 2, 页码: 164-169
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
InAs self-assembled nanostructures grown on InP(001) 期刊论文
chinese physics, 2000, 卷号: 9, 期号: 3, 页码: 222-224
作者:  Xu B
收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) 期刊论文
journal of applied physics, 1999, 卷号: 85, 期号: 1, 页码: 619-621
作者:  Xu B
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy 期刊论文
applied physics letters, 1999, 卷号: 74, 期号: 10, 页码: 1388-1390
Li HX; Daniels-Race T; Wang ZG
收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
High-density InAs nanowires realized in situ on (100) InP 期刊论文
applied physics letters, 1999, 卷号: 75, 期号: 8, 页码: 1173-1175
Li HX; Wu J; Wang ZG; Daniels-Race T
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 17, 页码: 2123-2125
作者:  Xu B
收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12


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