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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres 期刊论文 japanese journal of applied physics, 2012, 卷号: 51, 期号: 2，part 1, 页码: 20204 Zhang, YY; Li, J; Wei, TB; Liu, J; Yi, XY; Wang, GH; Yi, FT 收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17 Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   Fabrication and optical characterization of GaN-based nanopillar light emitting diodes 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3485-3488 Zhu, JH; Zhang, SM; Sun, X; Zhao, DG; Zhu, JJ; Liu, ZS; Jiang, DS; Duan, LH; Wang, H; Shi, YS; Liu, SY; Yang, H 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 INDUCTIVELY-COUPLED PLASMA  ARRAYS  NANOSTRUCTURES  LUMINESCENCE  NANORODS   Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3448-3451 Gao, HY; Yan, FW; Fan, ZC; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：75/0  |  提交时间：2010/03/08 EMITTING-DIODES  EFFICIENCY  OUTPUT   ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文 plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG 收藏  |  浏览/下载：78/7  |  提交时间：2010/08/12 ECR plasma  cubic GaN  low pressure MOCVD  MOLECULAR-BEAM EPITAXY  CYCLOTRON-RESONANCE PLASMA  LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  GALLIUM NITRIDE  GAAS  DIMETHYLHYDRAZINE