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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1034-1037
Hao, XP; Wang, BY; Yu, RS; Wei, L; Wang, H; Zhao, DG; Hao, WC
收藏  |  浏览/下载：70/2  |  提交时间：2010/03/08
Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 5, 页码: 1306-1309
Wang XX; Zhang JG; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY; Wang JH; Deng HF; Lin LY
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Thermal annealing behaviour of Pt on n-GaN Schottky contacts 期刊论文
journal of physics d-applied physics, 2003, 卷号: 36, 期号: 8, 页码: 1018-1022
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载：179/3  |  提交时间：2010/08/12
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF; Cao YG; Xie MH; Wang XL; Tong SY
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials 期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115324
Zhang MH; Guo LW; Li HW; Li W; Huang Q; Bao CL; Zhou JM; Liu BL; Xu ZY; Zhang YH; Lu LW
收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12

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