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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 EMISSION   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：98/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Dong, QR; Niu, ZC 收藏  |  浏览/下载：193/59  |  提交时间：2010/03/29 DOTS   Optical properties of AIInGaN quaternary alloys 会议论文 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  LUMINESCENCE  RELAXATION  SILICON  BAND   High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文 13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998 Wang YJ; Jiang ZX; McCombe BD; Peeters FM; Wu XG; Hai GQ; Eustis TJ; Schaff W 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 cyclotron resonance  electron-phonon interaction  electron-electron interaction  high magnetic fields  EXCHANGE ENHANCEMENT  GAAS  HETEROSTRUCTURES  GAS  LIMIT  HETEROJUNCTIONS  POLARONS  MODES  LEVEL   Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文 8th international conference on modulated semiconductor structures, santa barbara, california, jul 14-18, 1997 Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 resonant magnetopolaron effects  GaAs/AlGaAs quantum well structures  interface phonons  electron-optical-phonon interaction  POLARON-CYCLOTRON-RESONANCE  PHONON MODES  GAAS  HETEROSTRUCTURES  SUPERLATTICES  ELECTRONS   Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 会议论文 14th latin american symposiumm on solid state physics, oaxaca, mexico, jan 11-16, 1998 Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG 收藏  |  浏览/下载：4/0  |  提交时间：2010/11/15 ELECTRICAL-PROPERTIES  ION-IMPLANTATION  REGROWTH  SILICON  LAYERS