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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文 asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003 Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM 收藏  |  浏览/下载：16/1  |  提交时间：2010/10/29 GaNAs  SiO2 encapsulation  rapid-thermal-annealing  nitrogen reorganization  MOLECULAR-BEAM EPITAXY  OPTICAL-PROPERTIES  MU-M   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   New way to enhance the uniformity of self-organized InAs quantum dots 会议论文 25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998 Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  THRESHOLD  GROWTH  LASER   The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 GROWTH  INTERDIFFUSION  ISLANDS  SCALE