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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Self-assembled GaAs quantum rings by MBE droplet epitaxy 会议论文 china international conference on nanoscience and technology (chinanano 2005), beijing, peoples r china, jun 09-11, 2005 Huang, SS (Huang, Shesong); Niu, ZC (Niu, Zhichuan); Xia, JB (Xia, Jianbai) 收藏  |  浏览/下载：233/75  |  提交时间：2010/03/29 quantum single rings  concentric quantum double rings  coupled concentric quantum double ring  droplet epitaxy   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN