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Characteristics of charge density waves on the surfaces of quasi-one-dimensional charge-transfer complex layered organic crystals 期刊论文
physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.125434
Lin F; Huang XM; Qu SC; Fang ZY; Huang S; Song WT; Zhu X; Liu ZF
收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05
1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文
ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ
收藏  |  浏览/下载：102/2  |  提交时间：2011/07/05
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD; Jiang C; Zhu QS; Sakaki H
收藏  |  浏览/下载：60/9  |  提交时间：2011/07/05
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：151/30  |  提交时间：2010/04/13
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure 期刊论文
physics letters a, 2009, 卷号: 373, 期号: 22, 页码: 1983-1987
作者:  Zhang XW;  Wang Y;  Yin ZG
收藏  |  浏览/下载：126/57  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG
收藏  |  浏览/下载：65/0  |  提交时间：2010/04/11
Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 230-236
Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：39/16  |  提交时间：2010/03/17

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