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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文 materials letters, 2012, 卷号: 68, 页码: 327-330 Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17 Controllable Growth of Highly Ordered ZnO Nanorod Arrays via Inverted Self-Assembled Monolayer Template 期刊论文 acs applied materials & interfaces, 2011, 卷号: 3, 期号: 11, 页码: 4388-4395 Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Tan HR (Tan H. R.); Gao Y (Gao Y.); Si FT (Si F. T.); Gao HL (Gao H. L.) 收藏  |  浏览/下载：18/0  |  提交时间：2012/02/21 Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：75/0  |  提交时间：2010/03/29 INAS QUANTUM DOTS   Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment 期刊论文 journal of physical chemistry b, 2006, 卷号: 110, 期号: 32, 页码: 15749-15754 Cheng BC (Cheng Baochang); Qu SC (Qu Shengchun); Zhou HY (Zhou Huiying); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11 GALLIUM NITRIDE NANOTUBES  SINGLE-CRYSTALLINE  ALUMINA NANOTUBES  ALPHA-AL2O3 NANOWIRES  OXIDE NANOTUBES  ROUTE  FILMS  NANOSTRUCTURES  PHOTOLUMINESCENCE  TEMPERATURE