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| Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101
作者: Zhan-Wei Shen; Feng Zhang; Sima Dimitrijev; Ji-Sheng Han; Guo-Guo Yan
  收藏 | 浏览/下载：37/0 | 提交时间：2018/06/15 |
| Study on the response of InAs nanowire transistors to H2O and NO2 期刊论文
sensors and actuators b-chemical volume, 2015, 卷号: 209, 页码: 456–461
Xintong Zhang; Mengqi Fu; Xing Li; Tuanwei Shi; Zhiyuan Ning; Xiaoye Wang
收藏 | 浏览/下载：22/0 | 提交时间：2016/03/22 |
| Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 8, 页码: 084208
Wang YB (Wang Yong-Bin); Xu Y (Xu Yun); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui)
收藏 | 浏览/下载：19/0 | 提交时间：2013/04/02 |
| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者: Xu B
收藏 | 浏览/下载：51/3 | 提交时间：2011/07/05
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| Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 23, 页码: art. no. 232116
作者: Jiang CY; Yu JL
收藏 | 浏览/下载：50/6 | 提交时间：2011/07/15
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| Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者: Song HP; Wei HY; Li CM; Jiao CM
收藏 | 浏览/下载：66/4 | 提交时间：2011/07/05
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| Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文
physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302
Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG
收藏 | 浏览/下载：64/2 | 提交时间：2011/07/05
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| Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo)
收藏 | 浏览/下载：17/0 | 提交时间：2010/12/28
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| Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者: Cao YL; Yang T
收藏 | 浏览/下载：18/0 | 提交时间：2011/07/05
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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T; Yang XG; Wang KF
收藏 | 浏览/下载：65/2 | 提交时间：2011/07/05
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