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| Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 076105
作者: Xiao-Meng Zhao; Yang Zhang; Li-Jie Cui; Min Guan; Bao-Qiang Wang
  收藏 | 浏览/下载：18/0 | 提交时间：2018/06/15 |
| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497
作者: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji
收藏 | 浏览/下载：31/0 | 提交时间：2018/05/23 |
| Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang
收藏 | 浏览/下载：25/0 | 提交时间：2017/03/10 |
| Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers 期刊论文
ieee photonics technology letters, 2016, 卷号: 28, 期号: 13, 页码: 1481-1484
Feng Gao; Shuai Luo; Haiming Ji; Songtao Liu; Feng Xu; Zun-Ren Lv; Dan Lu; Chen Ji; Tao Yang
收藏 | 浏览/下载：18/0 | 提交时间：2017/03/10 |
| Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells 期刊论文
nanoscale res lett, 2016, 卷号: 11, 期号: 1, 页码: 477
Jinling Yu; Xiaolin Zeng; Shuying Cheng; Yonghai Chen; Yu Liu; Yunfeng Lai; Qiao Zheng; Jun Ren
收藏 | 浏览/下载：15/0 | 提交时间：2017/03/10 |
| Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文
scientific reports, 2016, 卷号: 6, 页码: 20787
Guijuan Zhao; Lianshan Wang; Shaoyan Yang; Huijie Li; Hongyuan Wei; Dongyue Han; Zhanguo Wang
收藏 | 浏览/下载：27/0 | 提交时间：2017/03/10 |
| Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文
chin. phys. lett., 2016, 卷号: 34, 期号: 1, 页码: 018101
Hai-Long Yu; Hao-Yue Wu; Hai-Jun Zhu; Guo-Feng Song; Yun Xu
收藏 | 浏览/下载：16/0 | 提交时间：2017/03/16 |
| Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering 期刊论文
applied physics letters, 2016, 卷号: 109, 期号: 17, 页码: 173106
J. H. Meng; X. W. Zhang; H. Liu; Z. G. Yin; D. G. Wang; Y. Wang; J. B. You; J. L. Wu
收藏 | 浏览/下载：20/0 | 提交时间：2017/03/10 |
| Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures 期刊论文
applied physics express, 2016, 卷号: 9, 期号: 5, 页码: 052104
Fei Ren; Feng-Jiao Wang; Shu-Man Liu; Zhen-Dong Ning; Ning Zhuo; Xiao-Ling Ye; Jun-Qi Liu; Li-Jun Wang; Feng-Qi Liu; Zhan-Guo Wang
收藏 | 浏览/下载：20/0 | 提交时间：2017/03/10 |
| A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers 期刊论文
optics communications, 2016, 卷号: 374, 页码: 114-118
Guipeng Liu; WenjieChen; LinshengLiu; PengJin; YonghuiTian; JianhongYang
收藏 | 浏览/下载：12/0 | 提交时间：2017/03/10 |
