CORC

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CORC

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Study on growth mechanism of low-temperature prepared microcrystalline Si thin films 期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 4, 页码: 1890-1894
Gu, JH; Zhou, YQ; Zhu, MF; Li, GH; Kun, D; Zhou, BQ; Liu, FZ; Liu, JL; Zhang, QF
收藏  |  浏览/下载：48/0  |  提交时间：2010/03/17
Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100) 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 6, 页码: 567-573
Sun Guosheng; Sun Yanling; Wang Lei; Zhao Wanshun; Luo Muchang; Zhang Yongxing; Zeng Yiping; Li Jinmin; Lin Lanying
收藏  |  浏览/下载：21/0  |  提交时间：2010/11/23
A geometrical model of GaN morphology in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 115-120
作者:  Han PD
收藏  |  浏览/下载：79/8  |  提交时间：2010/08/12
Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266
Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY
收藏  |  浏览/下载：83/3  |  提交时间：2010/08/12
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D
收藏  |  浏览/下载：76/3  |  提交时间：2010/08/12
Surface morphology of ion-beam deposited carbon films under high temperature 期刊论文
journal of vacuum science & technology a-vacuum surfaces and films, 2002, 卷号: 20, 期号: 6, 页码: 2072-2074
Liao MY; Chai CL; Yang SY; Liu ZK; Qin FG; Wang ZG
收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载：155/29  |  提交时间：2010/08/12
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 期刊论文
journal of crystal growth, 2000, 卷号: 221, 期号: 0, 页码: 356-361
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15

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