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半导体研究所 [12]

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半导体材料 [12]

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限定条件	学科主题：半导体材料

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	Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801 作者: Xu B 收藏 \| 浏览/下载：51/3 \| 提交时间：2011/07/05 CONTINUOUS-WAVE OPERATION EMISSION LASERS WAVELENGTH EXCITONS ENERGY
	Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏 \| 浏览/下载：28/0 \| 提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX GROWTH LASERS GAAS
	Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文 electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170 作者: Ye XL; Xu B 收藏 \| 浏览/下载：77/0 \| 提交时间：2010/04/11 SEMICONDUCTOR-DEVICES TRANSPORT STATES BISTABILITY VOLTAGE LASERS DIODE
	Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL; Xu B; Jin P 收藏 \| 浏览/下载：90/0 \| 提交时间：2010/04/11 GAAS SPECTROSCOPY PARAMETERS TRANSPORT LASERS ENERGY STATES HOLE
	Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文 journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400 作者: Xu B; Ye XL 收藏 \| 浏览/下载：63/0 \| 提交时间：2010/08/12 photoluminescence molecular beam epitaxy nanomaterials quantum dots semiconducting III-V materials 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS GROWTH LASERS INP
	Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B; Li CM; Jin P; Ye XL; Li DB 收藏 \| 浏览/下载：97/0 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS
	Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46 作者: Xu B; Ye XL 收藏 \| 浏览/下载：77/2 \| 提交时间：2010/08/12 nanostructures molecular beam epitaxy semiconducting III-V materials ELECTRON-PHONON INTERACTIONS TEMPERATURE-DEPENDENCE SEMICONDUCTOR NANOCRYSTALS CARRIER TRANSFER INAS GAAS LASERS ISLANDS GROWTH GAIN
	Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 55-60 Lin F; Wu J; Jiang WH; Cui H; Wang ZG 收藏 \| 浏览/下载：102/5 \| 提交时间：2010/08/12 low dimensional structures molecular beam epitaxy semiconducting III-V materials MOLECULAR-BEAM EPITAXY GAAS GROWTH PHOTOLUMINESCENCE SURFACES ARRAYS LASER
	Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368 Wang XD; Niu ZC; Feng SL; Miao ZH 收藏 \| 浏览/下载：93/3 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures optical microscopy molecular beam epitaxy nanomaterials semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE M PHOTOLUMINESCENCE INGAAS OVERGROWTH GAAS DOTS EMISSION ENERGY LASER
	Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文 journal of crystal growth, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21 作者: Ye XL; Xu B 收藏 \| 浏览/下载：35/0 \| 提交时间：2010/08/12 quantum dots molecular beam epitaxy high index MOLECULAR-BEAM EPITAXY STRAINED ISLANDS GAAS ORGANIZATION INP(001) LASERS INGAAS LAYER

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